Positron Annihilation Studies of Czochralski-Grown Silicon Annealed Under Pressure
نویسندگان
چکیده
منابع مشابه
Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon
The effect of stress (exerted by hydrostatic pressure of argon ambient enhanced up to 1.2 GPa) on the creation of oxygen-related defects in annealed Czochralski grown silicon (Cz-Si) was investigated. Concentrations of oxygen interstitials and of dislocations in Cz-Si samples with before-created nucleation centres for oxygen precipitation were markedly lower after pressure treatment at 1120 to ...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1999
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.95.575